Semicondcutor packages

ABSTRACT

One of semiconductor packages includes a substrate and a package structure. The package structure is bonded to the substrate and includes a first redistribution layer structure, a first logic die, a plurality of second logic dies, a first memory die, a first heat conduction block and a first encapsulant. The first logic die and the second logic dies are disposed over and electrically connected to the first redistribution layer structure. The first memory die is disposed over the first logic die and the second logic dies and electrically connected to first redistribution layer structure. The first heat conduction block is disposed over the first logic die and the second logic dies. The first encapsulant encapsulates the first memory die and the first heat conduction block.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/893,794, filed on Aug. 29, 2019. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

Semiconductor packages are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. In terms of the packaging used for integratedcircuit components or semiconductor dies, one or more chip packages aregenerally bonded to a circuit carrier (e.g., a system board, a printedcircuit board, or the like) for electrical connections to other externaldevices or electronic components.

Recently, high-performance computing (HPC) has become more popular andbeing widely used in advanced networking and server applications,especially for AI (artificial intelligence) related products thatrequire high data rate, increasing bandwidth and for lowering latency.However, as the package size is getting larger for packages includingthe HPC component, communication between the dies has become a morechallenging issue.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1E are front views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 2 is a top view of a semiconductor package.

FIG. 3 is a front view of a semiconductor package in accordance withsome embodiments.

FIG. 4A to FIG. 4E are front views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 5 is a top view of a semiconductor package.

FIG. 6 is a front view of a semiconductor package in accordance withsome embodiments.

FIG. 7 is a front view of a semiconductor package in accordance withsome embodiments.

FIG. 8A to FIG. 8E are lateral views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 9 is a top view of a semiconductor package.

FIG. 10 is a lateral view of a semiconductor package in accordance withsome embodiments.

FIG. 11A to FIG. 11E are lateral views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 12 is a top view of a semiconductor package.

FIG. 13 is a lateral view of a semiconductor package in accordance withsome embodiments.

FIG. 14A to FIG. 14E are front views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 15 is a top view of a semiconductor package.

FIG. 16 is a front view of a semiconductor package in accordance withsome embodiments.

FIG. 17A to FIG. 17E are lateral views of a method of forming asemiconductor package in accordance with some embodiments.

FIG. 18 is a top view of a semiconductor package.

FIG. 19 is a lateral view of a semiconductor package in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In addition, terms, such as “first,” “second,” “third,” “fourth,” andthe like, may be used herein for ease of description to describe similaror different element(s) or feature(s) as illustrated in the figures, andmay be used interchangeably depending on the order of the presence orthe contexts of the description.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good semiconductor devices to increase the yieldand decrease costs.

FIG. 1A to FIG. 1E are front views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 2 is atop view of a semiconductor package. FIG. 1A to FIG. 1E are viewed froma front side FS of the semiconductor package of FIG. 2, and a secondlogic die at the front side is omitted in FIG. 1A to FIG. 1E forclarity.

Referring to FIG. 1A, a carrier 102 with a de-bonding layer 104 coatedthereon is provided. In some embodiments, the carrier 102 may be a glasscarrier, a ceramic carrier, a metal carrier or any other carriersuitable for carrying a semiconductor wafer or a reconstituted wafer forthe manufacturing method of the semiconductor package. The de-bondinglayer 104 includes, for example, a light-to-heat conversion (“LTHC”)layer, and such layer enables debonding from the carrier by applyinglaser irradiation. In some alternative embodiments, the de-bonding layer104 may be any other material suitable for bonding and debonding thecarrier 102 from the above layers or wafer disposed thereon. In somealternative embodiments, a buffer layer may be formed between thede-bonding layer 104 and the carrier 102. In addition, a dielectriclayer (not shown) may be formed over the de-bonding layer 104. Thedielectric layer may be polymer such as polyimide, benzocyclobutene(“BCB”) and polybenzoxazole (“PBO”), non-organic dielectric materialssuch as silicon oxide, silicon nitride, silicon carbide, siliconoxynitride, or the like. However, the materials of the carrier 102, thede-bonding layer 104 and the dielectric layer are merely forillustration, and the disclosure is not limited thereto.

Then, a first logic die LD1 and a plurality of second logic dies LD2 aredisposed over the carrier 102. For example, the first logic die LD1 andthe second logic dies LD2 are picked and placed onto the de-bondinglayer 104. In some embodiments, a die attach film 106 is located betweenthe first logic die LD1 and the de-bonding layer 104 and between thesecond logic dies LD2 and the de-bonding layer 104 for adhering thefirst logic die LD1 and the second logic dies LD2 onto the de-bondinglayer 104. In some embodiments, as shown in FIGS. 1A and 2, the firstlogic die LD1 is surrounded by the second logic dies LD2. For example,the second logic dies LD2 are respectively disposed at one side of thefirst logic die LD1. In some embodiments, the first logic die LD1 andthe second logic dies LD2 are disposed at the same level and arecollectively referred to as the first layer.

In some embodiments, the first logic die LD1 is different from thesecond logic dies LD2. The first logic die LD1 may be an I/O die, anapplication-specific integrated circuit (ASIC) die, a field programmablegate array (FPGA), or the like. The second logic dies LD2 may berespectively a central processing unit (CPU) die, a graphics processingunit (CPU) die, a general processing unit (GPU) die, an artificialintelligence (AI) engine die, a Transceiver (TRX) die, or the like. Insome embodiments, the first logic die LD1 is an I/O die. The secondlogic dies LD2 at one opposite sides (e.g., first and second sides suchas lateral sides) of the first logic die LD1 may be the same dies suchas CPU/GPU chiplets/cores. The second logic dies LD2 at the otheropposite sides (e.g., third and fourth sides such as front side and backside) of the first logic die LD1 may be different dies such as an AIengine die and a Transceiver (TRX) die. However, the disclosure is notlimited thereto.

In some embodiments, the first logic die LD1 and the second logic diesLD2 have a dielectric layer 112 thereon and a plurality of connectors114 in the dielectric layer 112. In some embodiments, as shown in FIG.1A, the first logic die LD1 include the connectors 114 at oppositesurfaces and a plurality of through vias 116 electrically connecting theconnectors 114 at the opposite surfaces. In some embodiments, thedielectric layer 112 includes organic materials such as polybenzoxazole(PBO) and polyimide (PI) or inorganic materials. The connectors 114 maybe vias, pads, pillars or other suitable connectors. However, thestructure of the first logic die LD1 and the second logic dies LD2 aremerely for illustration, and the disclosure is not limited thereto. Thethrough vias 116 are also referred to as through semiconductor vias orthrough silicon vias, for example. In some embodiments, as shown in FIG.2, the first logic die LD1 further includes a PHY (physical) layer and aplurality of ports (not shown) for data transportation of the firstlogic die LD1 and the second logic dies LD2. The ports may be IFISports, PCIe ports and/or SATA ports.

Referring to FIG. 1B, an encapsulant 120 is formed to encapsulate thefirst logic die LD1 and the second logic dies LD2. The encapsulant 120is formed around the first logic die LD1 and the second logic dies LD2and fills the gap between the first logic die LD1 and the second logicdies LD2. In some embodiments, the encapsulant 120 includes a moldingcompound, a resin, or the like. In some alternative embodiments, theencapsulant 120 includes silicon oxide, silicon nitride, a polymermaterial such as polybenzoxazole (PBO), polyimide, benzocyclobutene(BCB), a combination thereof, or the like. In some embodiments, theencapsulant 120 is molded, and then grinded by a grinding process untila top surface of the encapsulant 120 is substantially flush with topsurfaces of the first logic die LD1 and the second logic dies LD2. Insome alternative embodiments, the dielectric layer 112 and/or theconnectors 114 may be also partially removed by the grinding process.

Then, a redistribution layer structure 130 is formed over theencapsulant 120 and electrically connected to the first logic die LD1and the second logic dies LD2. The redistribution layer structure 130includes a dielectric layer 132 and conductive features 134 in thedielectric layer 132. The conductive features 134 are electricallyconnected to the connectors 114 of the first logic die LD1 and thesecond logic dies LD2. In some embodiments, the dielectric layer 132includes polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB),silicon oxide, silicon nitride, a combination thereof, or the like. Insome embodiments, the conductive features 134 are conductive linesand/or conductive vias. In some embodiments, the conductive features 134include Cu, Ti, Ta, W, Ru, Co, Ni, a combination thereof, or the like.In some alternative embodiments, a seed layer and/or a barrier layer isdisposed between the metal feature 134 and the dielectric layer 132. Theseed layer includes, for example, Ti/Cu. The barrier layer may includeTa, TaN, Ti, TiN, CoW or a combination thereof.

After that, a plurality of conductive terminals 140 are formed over andelectrically connected to the redistribution layer structure 130. Theconductive terminals 140 may include solder material including alloys oftin, lead, silver, copper, nickel, bismuth, or combinations thereof. Insome embodiments, the conductive terminals 140 include controlledcollapse die connection (C4) bumps, micro-bumps, electrolessnickel-electroless palladium-immersion gold technique (ENEPIG) formedbumps, ball grid array (BGA), conductive pillars, combination thereof,or the like. In some embodiments, the conductive terminals 140 areelectrically connected to the first logic die LD1 and the second logicdies LD2 through the redistribution layer structure 130.

Referring to FIG. 1C, the die attach film 106 is de-bonded from thede-bonding layer 104, such that the structure over the de-bonding layer104 is separated from the carrier 102. That is, the carrier 102 isremoved. In some embodiments, the de-bonding layer 104 (e.g., the LTHCrelease layer) may be irradiated by an UV laser such that the die attachfilm 106 adhered on the de-bonding layer 104 is peeled from the carrier102. Then, the formed structure is turned upside down and disposed on acarrier 142. After that, the die attach film 106 is removed. In someembodiments, after removing the die attach film 106, a planarizationprocess may be performed onto the structure of FIG. 1C.

Then, a redistribution layer structure 150 is formed over theencapsulant 120 to electrically connect to the first logic die LD1. Insome embodiments, the redistribution layer structure 150 may include adielectric layer 152 and conductive features 154 in the dielectric layer152. The dielectric layer 152 covers a top surface of the first logicdie LD1 and a portion of the encapsulant 120. In some embodiments, thedielectric layer 152 exposes top surfaces of the second logic dies LD2.The conductive features 154 are disposed in the dielectric layer 152 andelectrically connected to the connectors 114 of the first logic die LD1.In some embodiments, the conductive features 154 are protruded from thedielectric layer 152, in other words, top surfaces of the conductivefeatures 154 are exposed. In some embodiments, the conductive features154 are micro-bumps, for example.

Referring to FIGS. 1D and 2, a plurality of memory dies MD are disposedon and electrically connected to the first logic die LD1. In someembodiments, the memory dies MD are electrically connected to the firstlogic die LD1 through the redistribution layer structure 150. In someembodiments, the memory die MD may be a die such as a dynamicrandom-access memory (DRAM) and a synchronous dynamic random-accessmemory (SDRAM) or a die stack such as a high bandwidth memory (HBM)cube. In some embodiments, the memory die MD includes a plurality ofdies 162 and a controller die 164 under the dies 162. For example, thedies 162 are DRAM dies and the dies 162 are electrically connected toeach other by connectors 114 therebelow. The controller die 164 may bean HBM controller die. In some embodiments, there are through siliconvias in the dies 162, 164. However, the disclosure is not limitedthereto. In some embodiments, the memory dies MD are partiallyoverlapped with the first logic die LD1 therebeneath. In someembodiments, a shortest connecting distance is formed between thecontroller die 164 and the PHY layer of the first logic die LD1. In someembodiments, the memory die MD has a plurality of connectors 166therebeneath. In some embodiments, the connectors 166 of the memory dieMD are electrically connected to the conductive features 154 of theredistribution layer structure 150, and an underfill 167 is formed asidethe connectors 166 and the conductive features 154. It is noted that thememory die MD described above are for the purpose of illustration,however, the disclosure is not intended to limit thereto.

Then, a heat conduction block HC is picked and placed onto at least oneof the second logic dies LD2. For example, the heat conduction block HCis picked and placed onto top surfaces of the second logic dies LD2. Insome embodiments, the heat conduction block HC is disposed over thesecond logic dies LD2 which are disposed at the same side of the firstlogic die LD1. In other words, the heat conduction block HC maycontinuously cover two or more second logic dies LD2. For example, asshown in FIG. 1D, one heat conduction block HC is disposed over twosecond logic dies LD2 which are disposed at a first lateral side of thefirst logic die LD1, and another heat conduction block HC is disposedover another two second logic dies LD2 which are disposed at a secondlateral side of the first logic die LD1. However, the disclosure is notlimited thereto. In some alternative embodiments, the heat conductionblock HC may be disposed on one second logic die LD2, respectively. Insome embodiments, the heat conduction block HC includes thermalconductivity larger than an encapsulant 170 (shown in FIG. 1D). In someembodiments, the heat conduction block HC includes thermal conductivitysubstantially equal to or larger than silicon. In some embodiments, theheat conduction block HC may include a semiconductor material such assilicon, a conductive material such as copper, an insulating material, acombination thereof, or the like. In some embodiments, the heatconduction block HC may be free of active device and passive device andmay not provide addition electrical functionality to a semiconductorpackage 10 (as shown in FIG. 1E). In some embodiments, the heatconduction block HC may be configured as a heat dissipation feature thattransfers heat away from the integrated dies such as the first logic dieLD1, the second logic dies LD2 and the memory dies MD. In someembodiments, the heat conduction block HC is also referred to as a heatdissipation block. In addition, a size of the heat conduction block HCmay be adjusted according to the requirements. In some embodiments, thememory dies MD and the heat conduction blocks HC are disposed at thesame level and are collectively referred to as the second layer.

In some embodiments, the heat conduction block HC is disposed onto thesecond logic die LD2 through a thermally conductive adhesive 168 such asa die attach film (DAF) having high thermal conductivity, apolymer-based layer, a graphite film and a solder layer. That is, thethermally conductive adhesive 168 is disposed between the heatconduction block HC and the second logic die LD2. In some embodiments,the thermally conductive adhesive 168 is in direct contact with the heatconduction block HC and the second logic die LD2. In some embodiments, asidewall of the heat conduction block HC is substantially flush with asidewall of the thermally conductive adhesive 168. However, thedisclosure is not limited thereto.

Then, an encapsulant 170 is formed to encapsulate the memory dies MD andthe heat conduction blocks HC. The encapsulant 170 is formed around thememory dies MD and the heat conduction blocks HC and fills the gapbetween the memory dies MD and the heat conduction blocks HC. In someembodiments, the encapsulant 170 includes a molding compound, a resin,or the like. In some alternative embodiments, the encapsulant 170includes silicon oxide, silicon nitride, a polymer material such aspolybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), a combinationthereof, or the like. In some embodiments, the encapsulant 170 is moldedand grinded until a top surface of the encapsulant 170 is substantiallyflush with top surfaces of the memory dies MD and the heat conductionblocks HC. After forming the encapsulant 170, a package structure isformed over the carrier 142.

Referring to FIG. 1E, the package structure is de-bonded from thecarrier 142. Then, the package structure is bonded onto a substrate 180.In some alternative embodiments, before bonding to the substrate 180, asingulation process may be performed to form a single package structure.In some embodiments, the conductive terminals 140 of the packagestructure are bonded to a first surface of the substrate 180 toelectrically connect the substrate 180. In addition, a plurality ofterminal connectors 182 are disposed on a second surface opposite to thefirst surface of the substrate 180. The first logic die LD1 and thesecond logic dies LD2 may be electrically connected to the substrate 180through the conductive terminals 140 and the redistribution layerstructure 130. In some embodiments, the through vias 116 electricallyconnects the redistribution layer structure 130 and the redistributionlayer structure 150, and thus the memory dies MD may be electricallyconnected to the substrate 180 through the redistribution layerstructure 150, the through vias 116 of the first logic die LD1 and theredistribution layer structure 130. In some embodiments, the substrate180 is a printed circuit board, for example. Then, an underfill 184 isformed aside the terminal connectors 140 between the redistributionlayer structure 130 of the package structure and the substrate 180. Insome embodiments, a portion of a sidewall of the package structure iscovered by the underfill 184. Then, the semiconductor package 10 isformed. In some embodiments, the semiconductor package 10 includes thefirst layer and the second layer over the first layer, the first layerincludes the first logic die LD1 and the second logic dies LD2encapsulated by the encapsulant 120, and the second layer includes thememory dies MD and the heat conduction blocks HC encapsulated by theencapsulant 170.

FIG. 3 is a front view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 3 may be similar tothe semiconductor package of FIG. 1E, and main difference lies in thesecond layer. Thus, the same reference numerals are used to refer to thesame and liked parts, and its detailed description will be omittedherein. The difference is illustrated in details below.

Referring to FIG. 3, a semiconductor package 10 includes a substrate180, redistribution layer structures 130 and 150, a first layerincluding a first logic die LD1 and a plurality of second logic dies LD2and a second layer including a plurality of memory dies MD and aplurality of heat conduction blocks HC. The first layer is similar tothe first layer of the semiconductor package 10 of FIG. 1E, and thus thedetails are omitted. For example, the first logic die LD1 and the secondlogic dies LD2 surrounding the first logic die LD1 are disposed at thesame level and encapsulated by an encapsulant 120.

The second layer is disposed over the first layer. In some embodiments,the memory dies MD and the heat conduction blocks HC aside the memorydies MD are disposed at the same level and encapsulated by anencapsulant 170. In some embodiments, the memory dies MD are disposedover the first logic die LD1 and the second logic dies LD2. For example,the memory die MD (i.e., inner memory die) such as SDRAM is disposedover the first logic die LD1, and the memory dies MD (i.e., outer memorydies) including a plurality of dies 162 and a controller die 164 aredisposed aside the memory die MD over the second logic dies LD2. Thememory dies MD are electrically connected to the first logic die LD1 andthe second logic dies LD2 through the redistribution layer structure150. In some embodiments, the redistribution layer structure 150 mayentirely cover the encapsulant 120, the first logic die LD1 and thesecond logic dies LD2. The heat conduction blocks HC are disposed atopposite sides of the memory dies MD over the second logic dies LD2. Insome embodiments, the heat conduction blocks HC are adhered to thedielectric layer 152 through thermally conductive adhesives 168respectively.

FIG. 4A to FIG. 4E are front views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 5 is atop view of a semiconductor package. FIG. 4A to FIG. 4E are viewed froma front side FS of the semiconductor package of FIG. 5. The method ofFIG. 4A to FIG. 4E may be similar to the method of FIG. 1A to FIG. 1E,and thus the same reference numerals are used to refer to the same andliked parts, and its detailed description will be omitted herein. Thedifference is illustrated in details below.

Referring to FIG. 4A, a first logic die LD1 and a plurality of secondlogic dies LD2 are disposed on a de-bonding layer 104 over a carrier102. In some embodiments, the first logic die LD1 and the second logicdies LD2 may be picked and placed onto the de-bonding layer 104 througha die attach film 106. The first logic die LD1 and the second logic diesLD2 may have a dielectric layer 112 thereover and a plurality ofconnectors 114 in the dielectric layer 112. Then, an encapsulant 120A isformed to encapsulate the first logic die LD1 and the second logic diesLD2. After that, a plurality of conductive features 202 are formed onand electrically connected the first logic die LD1 and the second logicdies LD2. In some embodiments, the conductive features 202 are disposedon and electrically connected to the connectors 114 in an outer regionof the first logic die LD1 and the second logic dies LD2. In someembodiments, the conductive features 202 are micro-bumps, for example.In addition, a plurality of solder layers 204 are respectively formedover the conductive features 202.

Then, a plurality of conductive pillars 206 are formed on andelectrically connected to the connectors 114 of the first logic die LD1and the second logic dies LD2. In some embodiments, the conductivepillars 206 are disposed on and electrically connected to the connectors114 in an inner region of the first logic die LD1 and the second logicdies LD2. For example, the conductive pillars 206 are disposed betweenthe conductive features 202.

Referring to FIGS. 4B and 5, a plurality of bridges 210 are bonded ontothe first logic die LD1 and the second logic dies LD2, so as toelectrically connect the first logic die LD1 and the second logic diesLD2. In some embodiments, the bridge 210 has a plurality of connectors212 thereon, and the bridge 210 is bonded onto the first logic die LD1and the second logic die LD2 through the connectors 212 and theconductive features 202. In other words, the bridge 210 is disposedacross the second logic dies LD2 at the same side of the first logic dieLD1 and a portion of the first logic die LD1. In some embodiments, theconductive pillars 206 electrically connected to the first logic die LD1are disposed between the bridges 210. The bridge 210 has conductivetraces thereon for high speed/bandwidth data transportation between thefirst logic die LD1 and the second logic dies LD2. In some embodiments,the bridge 210 is a silicon bridge, for example. In some embodiments,top surfaces of the bridges 210 may be lower than top surfaces of theconductive pillars 206. However, the disclosure is not limited thereto.After bonding, an underfill 214 is formed aside the connectors 212 andthe conductive features 202 between the bridge 210 and the second logicdies LD2 and between the bridge 210 and the first logic die LD1.

Referring to FIG. 4C, an encapsulant 120B is formed to encapsulate thebridges 210, the underfill 214 and the conductive pillars 206. In someembodiments, the encapsulant 120B is molded, and grinded by a grindingprocess until a top surface of the encapsulant 120B is substantiallyflush with the top surfaces of the conductive pillars 206 and thebridges 210. In addition, the conductive pillars 206 and/or the bridges210 may be partially removed by the grinding process. Then, aredistribution layer structure 130 is formed over the encapsulant 120Band electrically connected to the first logic die LD1 and the secondlogic dies LD2. In some embodiments, the redistribution layer structure130 includes a dielectric layer 132 and conductive features 134 in thedielectric layer 132. The conductive features 134 are electricallyconnected to the first logic die LD1 and the second logic dies LD2through the conductive pillars 206. After that, a plurality ofconductive terminals 140 are formed over and electrically connected tothe redistribution layer structure 130.

Referring to FIG. 4D, the structure over the de-bonding layer 104 isseparated from the carrier 102 and disposed on a carrier 142. Afterthat, the die attach film 106 is removed. Then, a redistribution layerstructure 150 is formed over the encapsulant 120 to electrically connectto the first logic die LD1. In some embodiments, the redistributionlayer structure 150 may include a dielectric layer 152 and conductivefeatures 154 in the dielectric layer 152. In some embodiments, theconductive features 154 are micro-bumps. Then, as shown in FIGS. 4D and5, a plurality of memory dies MD are disposed on and electricallyconnected to the first logic die LD1. In some embodiments, the memorydies MD are partially overlapped with the first logic die LD1therebeneath. In some embodiments, the memory dies MD are electricallyconnected to the first logic die LD1 through the redistribution layerstructure 150 and the through vias 116 of the first logic die LD1. It isnoted that although the second logic dies LD2 are illustrated as beingat one opposite sides of the first logic die LD1, other second logicdies (not shown) may be further disposed at another one opposite sidesof the first logic die LD1 as shown in FIG. 2. In other words, thesecond logic dies LD2 may be disposed at any side(s) of the first logicdie LD1.

After that, a heat conduction block HC is disposed onto at least one ofthe second logic dies LD2. Then, an encapsulant 170 is formed toencapsulate the memory dies MD and the heat conduction blocks HC. Thus,a package structure is formed. In some embodiments, the formation andarrangement of the memory dies MD, the heat conduction block HC and theencapsulant 170 may be similar to those of the memory dies MD, the heatconduction block HC and the encapsulant 170 in FIG. 1D, that is, thesecond layer of FIG. 4D is similar to the second layer of FIG. 1D, andthus the details are omitted herein.

Referring to FIG. 4E, the package structure is de-bonded from thecarrier 142 and bonded onto a substrate 180. Then, an underfill 184 isformed aside terminal connectors 182 between the redistribution layerstructure 130 and the substrate 180, and a semiconductor package 10 isformed.

FIG. 6 is a front view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 6 may be similar tothe semiconductor packages of FIGS. 3 and 4E, and thus the samereference numerals are used to refer to the same and liked parts, andits detailed description will be omitted herein. The difference isillustrated in details below.

In some embodiments, a semiconductor package 10 includes a substrate180, redistribution layer structures 130 and 150, a plurality of bridges210, a first layer including a first logic die LD1 and a plurality ofsecond logic dies LD2 and a second layer including a plurality of memorydies MD and a plurality of heat conduction blocks HC. In someembodiments, the first layer and the bridges 210 are similar to thefirst layer and the bridges 210 of the semiconductor package 10 of FIG.4E, and the second layer is similar to the second layer of thesemiconductor package 10 of FIG. 3. Therefore, the details are omittedherein.

FIG. 7 is a front view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 7 may be similar tothe semiconductor package of FIG. 6, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the main difference between the semiconductors 10of FIGS. 6 and 7 lies in the disposition of the memory dies MD. In someembodiments, as shown in FIG. 7, at least one memory die MD is disposedunder the first logic die LD1. For example, the memory dies MD such asan HBM cube including DRAM dies and HBM controller die are disposedbetween the heat conduction blocks HC over the first logic die LD1, andthe memory die MD such as SDRAM die is disposed between the bridges 210under the first logic die LD1. In other words, the memory die MD may beinserted into the space formed between the bridges 210 and/or betweenthe first logic die LD1 and the redistribution layer structure 130. Insome embodiments, the memory die MD under the first logic die LD1 iselectrically connected to the first logic die LD1 through connectors 166and conductive features 202. In some embodiments, the bonding betweenthe bridges 210 and the first logic die LD1 is similar to the bondingbetween the bridges 210 and the second logic dies LD2. For example, theconductive features 202 between the bridges 210 and the first logic dieLD1 may be formed simultaneously with the conductive features 202between the bridges 210 and the second logic dies LD2, and an underfill214 aside the connectors 166 and the conductive features 202 may beformed simultaneously with the underfill 214 aside the connectors 212and the conductive features 202.

FIG. 8A to FIG. 8E are lateral views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 9 is atop view of a semiconductor package, and FIG. 8A to FIG. 8E are viewingfrom a lateral side LS of FIG. 9. The method of FIG. 8A to FIG. 8E maybe similar to the method of FIG. 1A to FIG. 1E, and thus the samereference numerals are used to refer to the same and liked parts, andits detailed description will be omitted herein. The difference isillustrated in details below.

Referring to FIG. 8A, a plurality of conductive pillars 206 are formedon a de-bonding layer 104 over a carrier 102. Then, a first logic dieLD1 and a plurality of second logic dies LD2 are disposed onto thede-bonding layer 104 between the conductive pillars 206. In someembodiments, the first logic die LD1 and the second logic dies LD2 maybe picked and placed onto the de-bonding layer 104 through die attachfilms 106. In some embodiments, as shown in FIG. 9, the second logicdies LD2 are disposed in front of the first logic die LD1 when viewingfrom the lateral side LS. In some embodiments, a size of the die attachfilm 106 may be substantially the same as a size of the first logic dieLD1 or the second logic die LD2. In other words, a sidewall of the dieattach film 106 may be substantially flush with a sidewall of the firstlogic die LD1 or the second logic die LD2. However, the disclosure isnot limited thereto.

Referring to FIG. 8B, an encapsulant 120 is formed to encapsulate thefirst logic die LD1, the second logic dies LD2 and the conductivepillars 206. Then, a redistribution layer structure 130 is formed overthe encapsulant 120 and electrically connected to the first logic dieLD1, the second logic dies LD2 and the conductive pillars 206. Afterthat, a plurality of conductive terminals 140 are formed over andelectrically connected to the redistribution layer structure 130.

Referring to FIG. 8C, the structure over the de-bonding layer 104 isseparated from the carrier 102, and the formed structure is turnedupside down and disposed on a carrier 142. After that, the die attachfilms 106 are removed. Then, a redistribution layer structure 150 isformed over the encapsulant 120 to electrically connect to theconductive pillars 206. In some embodiments, the redistribution layerstructure 150 may include a dielectric layer 152 and conductive features154 in the dielectric layer 152. In some embodiments, the topmostconductive features 154 may be micro-bumps, and other conductivefeatures 154 may be conductive lines and/or conductive vias.

Referring to FIG. 8D, a plurality of memory dies MD are disposed on andelectrically connected to the redistribution layer structure 150. Insome embodiments, the memory dies MD are partially overlapped with thefirst logic die LD1 therebeneath. In some embodiments, the memory diesMD are electrically connected to the redistribution layer structure 130through the redistribution layer structure 150 and the conductivepillars 206. The memory dies MD are electrically connected to the firstlogic die LD1 and the second logic dies LD2. After that, a heatconduction block HC is disposed over the first logic die LD1 and thesecond logic dies LD2. In some embodiments, the heat conduction block HCis disposed between the memory dies MD. In some embodiments, the memorydies MD and the heat conduction block HC are disposed at the same leveland are collectively referred to as the second layer. Then, anencapsulant 170 is formed to encapsulate the memory dies MD and the heatconduction block HC. After that, a package structure is formed over thecarrier 142.

Referring to FIG. 8E, the package structure is de-bonded from thecarrier 142 and bonded onto a substrate 180. Then, an underfill 184 isformed aside terminal connectors 182 between the redistribution layerstructure 130 and the substrate 180, and a semiconductor package 10 isformed.

FIG. 10 is a lateral view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 10 may be similar tothe semiconductor package of FIG. 8E, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the main difference between the semiconductors 10of FIGS. 10 and 8E lies in the second layer. In some embodiments, asshown in FIG. 10, more memory dies MD are disposed in the second layerover the first logic die LD1 and the second logic dies LD2. In someembodiments, some of the memory dies MD (e.g., inner memory dies) arepartially overlapped with the first logic die LD1 therebeneath. Some ofthe memory dies MD (e.g., outer memory dies) are not overlapped with thefirst logic die LD1 therebeneath. In some embodiments, the memory diesMD may be electrically connected to the redistribution layer structure130 through the redistribution layer structure 150 and the conductivepillars 206.

FIG. 11A to FIG. 11E are lateral views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 12 is atop view of a semiconductor package, and FIG. 11A to FIG. 11E areviewing from a lateral side LS of FIG. 12. The method of FIG. 11A toFIG. 11E may be similar to the method of FIG. 8A to FIG. 8E, and thusthe same reference numerals are used to refer to the same and likedparts, and its detailed description will be omitted herein. Thedifference is illustrated in details below.

Referring to FIG. 11A, a plurality of conductive pillars 206A, a firstlogic die LD1 and a plurality of second logic dies LD2 are disposed ontoa de-bonding layer 104 over a carrier 102. Then, an encapsulant 120A isformed to encapsulate the conductive pillars 206A, the first logic dieLD1 and the second logic dies LD2. After that, a plurality of conductivefeatures 202 and a plurality of solder layers 204 are formed on andelectrically connected to the second logic dies LD2. The forming theconductive pillars 206A, the first logic die LD1, the second logic diesLD2 and the encapsulant 120A are similar to the forming the conductivepillars 206A, the first logic die LD1, the second logic dies LD2 and theencapsulant 120 in FIGS. 8A and 8B, and thus details are omitted herein.

Referring to FIG. 11B, a plurality of conductive pillars 206B are formedon and electrically connected to the conductive pillars 206Arespectively. After that, a bridge 210 is bonded onto the first logicdie LD1 and the second logic dies LD2, so as to electrically connect thefirst logic die LD1 and the second logic dies LD2.

Referring to FIG. 11C, an encapsulant 120B is formed to encapsulate thebridges 210 and the conductive pillars 206B. In some embodiments, theencapsulant 120B is molded, and grinded by a grinding process until atop surface of the encapsulant 120B is substantially flush with the topsurfaces of the conductive pillars 206B and the bridges 210. In someembodiments, the conductive pillars 206B and/or the bridges 210 may bealso partially removed by the grinding process. Then, a redistributionlayer structure 130 is formed over the encapsulant 120B and electricallyconnected to the first logic die LD1 and the second logic dies LD2through the conductive pillars 206A and 206B. After that, a plurality ofconductive terminals 140 are formed over and electrically connected tothe redistribution layer structure 130.

Referring to FIG. 11D, the structure over the de-bonding layer 104 isseparated from the carrier 102 and disposed on a carrier 142. Afterthat, the die attach film 106 is removed. Then, as shown in FIGS. 11Dand 12, a plurality of memory dies MD are disposed on and electricallyconnected to the conductive pillars 206B. In some embodiments, thememory die MD is electrically connected to the redistribution layerstructure 130 through the conductive pillars 206A and 206B. After that,a heat conduction block HC is disposed over the first logic die LD1 andthe second logic dies LD2. In some embodiments, the heat conductionblock HC is disposed between the memory dies MD. Then, an encapsulant170 is formed to encapsulate the memory die MD and the heat conductionblocks HC. After that, a package structure is formed.

Referring to FIG. 11E, the package structure is de-bonded from thecarrier 142 and bonded onto a substrate 180. Then, an underfill 184 isformed aside terminal connectors 182 between the redistribution layerstructure 130 and the substrate 180, and a semiconductor package 10 isformed.

FIG. 13 is a lateral view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 13 may be similar tothe semiconductor package of FIG. 11E, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the main difference between the semiconductors 10of FIGS. 13 and 11E lies in the second layer. In some embodiments, thesecond layer is similar to the second layer of the semiconductor package10 of FIG. 10. In some embodiments, the memory dies MD are electricallyconnected to the redistribution layer structure 130 through theredistribution layer structure 150 and the conductive pillars 206A and206B. The memory dies MD are electrically connected to the first logicdie LD1 and the second logic dies LD2.

FIG. 14A to FIG. 14E are front views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 15 is atop view of a semiconductor package, and FIG. 14A to FIG. 14E areviewing from a front side FS of FIG. 15. The method of FIG. 14A to FIG.14E may be similar to the method of FIG. 4A to FIG. 4E, and thus thesame reference numerals are used to refer to the same and liked parts,and its detailed description will be omitted herein. The difference isillustrated in details below.

Referring to FIG. 14A, a first logic die LD1 and a plurality of heatconduction blocks HC are disposed onto a de-bonding layer 104 over acarrier 102. The first logic die LD1 and a plurality of heat conductionblocks HC are picked and placed onto a de-bonding layer 104 through adie attach film 106 respectively. Then, an encapsulant 120A is formed toencapsulate the first logic die LD1 and the heat conduction blocks HC.In some embodiments, the encapsulant 120A is molded, and grinded by agrinding process until a top surface of the encapsulant 120A issubstantially flush with top surfaces of the first logic die LD1 and theheat conduction blocks HC. In some alternative embodiments, upperportions of the first logic die LD1 (i.e., a dielectric layer 112 andconnectors 114) and/or the heat conduction blocks HC may be alsopartially removed by the grinding process. In some embodiments, the heatconduction blocks HC may be configured as both a heat dissipationfeature that transfers heat away from the integrated circuits and aplane for to be-formed redistribution layer structure 130.

Referring to FIG. 14B, a redistribution layer structure 130A is formedover the encapsulant 120A, the first logic die LD1 and the heatconduction blocks HC, to electrically connect to the first logic dieLD1. After that, a plurality of conductive pillars 206 are formed overand electrically connected to the redistribution layer structure 130A.Then, a plurality of second logic dies LD2 are disposed on andelectrically connected to the redistribution layer structure 130A. Insome embodiments, the second logic dies LD2 and the conductive pillars206 are alternately disposed. Then, an encapsulant 120B is formed toencapsulate the second logic dies LD2 and the conductive pillars 206. Insome embodiments, the encapsulant 120B is molded, and grinded by agrinding process until a top surface of the encapsulant 120B issubstantially flush with top surfaces of the second logic dies LD2 andthe conductive pillars 206. In some alternative embodiments, upperportions of the second logic dies LD2 and/or the conductive pillars 206may be also partially removed by the grinding process.

Referring to FIG. 14C, a redistribution layer structure 130B is formedover the encapsulant 120B. In some embodiments, the redistribution layerstructure 130B may be electrically connected to the second logic diesLD2, and the redistribution layer structure 130B may be electricallyconnected to the redistribution layer structure 130A through theconductive pillars 206. Then, a plurality of conductive terminals 140are formed over and electrically connected to the redistribution layerstructure 130B.

Referring to FIG. 14D, the structure over the de-bonding layer 104 isseparated from the carrier 102, and the formed structure is turnedupside down and disposed on a carrier 142. After that, the die attachfilm 106 is removed. Then, a plurality of conductive features 154 areformed on and electrically connected to the first logic die LD1. Afterthat, as shown in FIG. 15, a plurality of memory dies MD are disposed onthe first logic die LD1 and electrically connected to the first logicdie LD1 through the conductive features 154. Then, a plurality of heatconduction blocks HC are disposed aside the memory dies MD over the heatconduction blocks HC through thermally conductive adhesives 168. In someembodiments, the thermally conductive adhesive 168 is disposed betweenand in direct contact with the stacked heat conduction blocks HC. Insome embodiments, a size of the upper heat conduction block HC is largerthan a size of the lower upper heat conduction block HC, for example.However, the disclosure is not limited thereto. In some alternativeembodiments, a size of the upper heat conduction block HC may besubstantially equal to or smaller than a size of the lower upper heatconduction block HC. In other words, a size of the heat conduction blockHC may be adjusted according to the requirements. Then, an encapsulant170 is formed to encapsulate the memory dies MD and the heat conductionblocks HC. In some embodiments, the encapsulant 170 is molded, andgrinded by a grinding process until a top surface of the encapsulant 170is substantially flush with top surfaces of the memory dies MD and theheat conduction blocks HC. In some alternative embodiments, upperportions of the memory dies MD and the heat conduction blocks HC may bealso partially removed by the grinding process. Then, a packagestructure is formed.

Referring to FIG. 14E, the package structure is de-bonded from thecarrier 142 and bonded onto a substrate 180. Then, an underfill 184 isformed aside terminal connectors 182 between the redistribution layerstructure 130B and the substrate 180, and a semiconductor package 10 isformed. In some embodiments, the first logic die LD1, the second logicdie LD2 and the memory dies MD are stacked, and thus the semiconductorpackage 10 is also referred to as a 3D package. In some embodiments, aplurality of heat conduction blocks HC are disposed aside the integrateddies such as the first logic die LD1 and the memory dies MD, and thusthe heat generated by the integrated dies may be dissipated efficiently.

FIG. 16 is a front view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 16 may be similar tothe semiconductor package of FIG. 14E, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the main difference between the semiconductors 10of FIGS. 16 and 14E lies in the disposition of the memory dies MD. Insome embodiments, the disposition of the memory dies MD is similar tothe second layer of the semiconductor package 10 of FIG. 3, and thus thedetails are omitted. In some embodiments, the memory die MD may beelectrically connected to the redistribution layer structure 130Athrough the redistribution layer structure 150 and the through vias 116of the first logic die LD1, or the memory die MD may be electricallyconnected to the redistribution layer structure 130A through theredistribution layer structure 150 and the conductive pillars 206A. Thememory dies MD are electrically connected to the first logic die LD1 andthe second logic dies LD2.

FIG. 17A to FIG. 17E are lateral views of a method of forming asemiconductor package in accordance with some embodiments. FIG. 18 is atop view of a semiconductor package, and FIG. 17A to FIG. 17E areviewing from a lateral side LS of FIG. 18. The method of FIG. 17A toFIG. 17E may be similar to the method of FIG. 4A to FIG. 4E, and thusthe same reference numerals are used to refer to the same and likedparts, and its detailed description will be omitted herein. Thedifference is illustrated in details below.

Referring to FIG. 17A, a plurality of conductive pillars 206A are formedon a de-bonding layer 104 over a carrier 102. Then, a first logic dieLD1 is disposed onto the de-bonding layer 104 between the conductivepillars 206A through a die attach film 106. In some embodiments, theconductive pillars 206A are at opposite sides of the first logic dieLD1, for example. Then, an encapsulant 120A is formed to encapsulate thefirst logic die LD1 and the conductive pillars 206A.

Referring to FIG. 17B, a redistribution layer structure 130A is formedover the encapsulant 120A and electrically connected to the first logicdie LD1 and the conductive pillars 206A. Then, a plurality of conductivepillars 206B are formed on and electrically connected to the conductivepillars 206A respectively.

Referring to FIG. 17C, a plurality of second logic dies LD2 are disposedover and electrically connected to the redistribution layer structure130A. In some embodiments, as shown in FIG. 17C, the second logic diesLD2 are disposed behind the conductive pillars 206B. After that, anencapsulant 120B is formed to encapsulate the second logic dies LD2 andthe conductive pillars 206B. Then, a redistribution layer structure 130Bis formed over the encapsulant 120B and electrically connected to thesecond logic dies LD2 and the conductive pillars 206B. After that, aplurality of conductive terminals 140 are formed over and electricallyconnected to the redistribution layer structure 130B.

Referring to FIG. 17D, the structure over the de-bonding layer 104 isseparated from the carrier 102, and the formed structure is turnedupside down and disposed on a carrier 142. After that, the die attachfilm 106 is removed. Then, as shown in FIG. 18, a plurality of memorydies MD are disposed over the first logic die LD1 and the second logicdies LD2, and the memory dies MD are electrically connected to theconductive pillars 206B. In some embodiments, the memory dies MD arepartially overlapped with the first logic die LD1 therebeneath. However,the disclosure is not limited thereto. A plurality of heat conductionblocks HC are disposed between the memory dies MD over the first logicdie LD1 and the second logic dies LD2. Then, an encapsulant 170 isformed to encapsulate the memory die MD and the heat conduction blocksHC. After that, a package structure is formed.

Referring to FIG. 17E, the package structure is de-bonded from thecarrier 142 and bonded onto a substrate 180. Then, an underfill 184 isformed aside terminal connectors 182 between the redistribution layerstructure 130B and the substrate 180, and a semiconductor package 10 isformed.

FIG. 19 is a lateral view of a semiconductor package in accordance withsome embodiments. The semiconductor package of FIG. 19 may be similar tothe semiconductor package of FIG. 17E, and thus the same referencenumerals are used to refer to the same and liked parts, and its detaileddescription will be omitted herein. The difference is illustrated indetails below.

In some embodiments, the main difference between the semiconductors 10of FIGS. 19 and 17E lies in the disposition of the memory dies MD. Insome embodiments, the disposition of the memory dies MD is similar tothe second layer of the semiconductor package 10 of FIG. 10. In someembodiments, the memory die MD may be electrically connected to theredistribution layer structure 130B through the conductive pillars 206Aand 206B and to the first logic die LD1 through the conductive pillars206A and redistribution layer structure 130A. Thus, the electricalconduction pathway may be shortened.

In some embodiments, a plurality of dies with different sizes and/ortechnologies are heterogeneous integrated and stacked. Thus, form factormay be reduced. In some embodiments, the bridge is used as theinterconnection between logic dies such as core chiplet and I/O die, andthe interconnection is shortened. Accordingly, the electricalperformance is enhanced. In addition, at least one heat conduction blockis disposed aside the dies, and thus the heat generated by the dies maybe dissipated efficiently.

According to some embodiments, a semiconductor package includes asubstrate and a package structure. The package structure is bonded tothe substrate and includes a first redistribution layer structure, afirst logic die, a plurality of second logic dies, a first memory die, afirst heat conduction block and a first encapsulant. The first logic dieand the second logic dies are disposed over and electrically connectedto the first redistribution layer structure. The first memory die isdisposed over the first logic die and the second logic dies andelectrically connected to first redistribution layer structure. Thefirst heat conduction block is disposed over the first logic die and thesecond logic dies. The first encapsulant encapsulates the first memorydie and the first heat conduction block.

According to some embodiments, a semiconductor package includes apackage structure. The package structure includes a first logic die, atleast one first heat conduction block, a plurality of second logic dies,a first memory die and at least one second heat conduction block. Thefirst heat conduction block is disposed aside the first logic die. Thesecond logic dies are disposed over a first side of the first logic dieand electrically connected to the first logic die. The first memory dieis disposed over a second side opposite to the first side of the firstlogic die and electrically connected to the first logic die. The secondheat conduction block is disposed aside the first memory die and overthe at least one first heat conduction block.

According to some embodiments, a semiconductor package includes asubstrate and a package structure. The package structure is bonded tothe substrate and includes a first logic die, a plurality of secondlogic dies, a bridge, at least one first memory die and at least oneheat conduction block. The bridge is disposed over a first side of thefirst and second logic dies, wherein at least two of the first logic dieand the second logic dies are electrically connected by the bridge. Thefirst memory die is disposed over a second side opposite to the firstside of the first and second logic dies. The heat conduction block isdisposed over the second side opposite to the first side of the firstand second logic dies.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor package, comprising: a substrate;and a package structure, bonded to the substrate and comprising: a firstredistribution layer structure; a first logic die and a plurality ofsecond logic dies, disposed over and electrically connected to the firstredistribution layer structure; a first memory die, disposed over thefirst logic die and the second logic dies and electrically connected tofirst redistribution layer structure; a first heat conduction block,disposed over the first logic die and the second logic dies; and a firstencapsulant, encapsulating the first memory die and the first heatconduction block.
 2. The semiconductor package as claimed in claim 1further comprising a second encapsulant encapsulating the first logicdie and the second logic dies.
 3. The semiconductor package as claimedin claim 1 further comprising a second encapsulant encapsulating thefirst logic die and a third encapsulant encapsulating the second logicdies, wherein the second encapsulant is disposed between the firstencapsulant and the third encapsulant.
 4. The semiconductor package asclaimed in claim 1, wherein the first heat conduction block is free ofactive device and passive device.
 5. The semiconductor package asclaimed in claim 1, wherein the first heat conduction block is adheredto the second logic die through an adhesive.
 6. The semiconductorpackage as claimed in claim 1, further comprising a second heatconduction block, wherein the first heat conduction block and the secondheat conduction block are disposed at opposite sides of the first memorydie.
 7. The semiconductor package as claimed in claim 1, wherein thefirst heat conduction block continuously covers the second logic dies ata same side of the first logic die.
 8. A semiconductor package,comprising: a package structure, comprising: a first logic die; at leastone first heat conduction block, disposed aside the first logic die; aplurality of second logic dies, disposed over a first side of the firstlogic die and electrically connected to the first logic die; a firstmemory die, disposed over a second side opposite to the first side ofthe first logic die and electrically connected to the first logic die;and at least one second heat conduction block, disposed aside the firstmemory die and over the at least one first heat conduction block.
 9. Thesemiconductor package as claimed in claim 8, further comprising asubstrate, a first redistribution layer structure, a secondredistribution layer structure and a plurality of through vias, whereinthe package structure is bonded to the substrate, the firstredistribution layer structure is disposed between the first logic dieand the second logic dies, the second redistribution layer structure isdisposed between the second logic dies and the substrate, and thethrough vias are disposed between the first redistribution layerstructure and the second redistribution layer structure.
 10. Thesemiconductor package as claimed in claim 9, further comprising a thirdredistribution layer structure between the first memory die and thefirst logic die.
 11. The semiconductor package as claimed in claim 8,wherein the at least one first heat conduction block includes aplurality of first heat conduction blocks, and the first heat conductionblocks are disposed at opposite sides of the first logic die.
 12. Thesemiconductor package as claimed in claim 8, wherein the at least onesecond heat conduction block includes a plurality of second heatconduction blocks, and the second heat conduction blocks are disposed atopposite sides of the second logic dies.
 13. The semiconductor packageas claimed in claim 8, further comprising an adhesive and a dielectriclayer, wherein the at least one second heat conduction block is adheredto the at least one first heat conduction block through the adhesive.14. The semiconductor package as claimed in claim 8, further comprisingan adhesive and a dielectric layer, wherein the at least one second heatconduction block is adhered to the at least one first heat conductionblock through the adhesive, and the dielectric layer is disposed betweenthe adhesive and the at least one first heat conduction block.
 15. Asemiconductor package, comprising: a substrate; and a package structure,bonded to the substrate and comprising: a first logic die; a pluralityof second logic dies; a bridge, disposed over a first side of the firstand second logic dies, wherein at least two of the first logic die andthe second logic dies are electrically connected by the bridge; at leastone first memory die, disposed over a second side opposite to the firstside of the first and second logic dies; and at least one heatconduction block, disposed over the second side opposite to the firstside of the first and second logic dies.
 16. The semiconductor packageas claimed in claim 15, further comprising a second memory die disposedaside the bridge over the first side of the first and second logic dies.17. The semiconductor package as claimed in claim 15, wherein the atleast one first memory die comprises a plurality of first memory dies,and the at least one heat conduction block is disposed between the firstmemory dies.
 18. The semiconductor package as claimed in claim 15,wherein the at least one heat conduction block comprises a plurality ofheat conduction blocks, and the at least one first memory die isdisposed between the heat conduction blocks.
 19. The semiconductorpackage as claimed in claim 15, further comprising a firstredistribution layer structure between the substrate and the bridge anda plurality of through vias between the first logic die and the firstredistribution layer structure.
 20. The semiconductor package as claimedin claim 15, further comprising a first redistribution layer structurebetween the substrate and the bridge and a plurality of through viasbetween the at least one first memory die and the first redistributionlayer structure.